Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-10-15
著者
-
ENDO Masamori
Department of Physics, School of Science, Tokai University
-
Kamon K
Assoc. Super‐advsnced Electronics Technol. Kanagawa Jpn
-
Kamon K
Kwansei Gakuin Univ. Nishinomiya
-
Kamon Kazuya
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Ul
-
Kamon Kazuya
School Of Science Kwansei Gakuin University
-
Endo M
Department Of Physics School Of Science Tokai University
-
Yamaguchi A
Hitachi Ltd. Tokyo Jpn
-
Yamaguchi Atsumi
Ulsi Development Center Mitsubishi Electric Corporation
-
Mori S
Department Of Electric And Electrical Engineering School Of Science And Engineering Saga University
-
MORI Shigeyasu
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
OHFUJI Takeshi
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
SASAGO Masaru
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
KUHARA Koichi
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
-
MORISAWA Taku
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
-
MATSUZAWA Nobuyuki
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
-
ENDO Masayuki
Yokohama Research Center, Association of Super-advanced Electronics Technologies (ASET)
-
Yamaguchi Atsuko
Central Research Laboratory Hitachi Ltd.
-
Yamaguchi Atsuko
Association Of Super-advanced Electronics Technologies:(present Address)hitachi Central Laboratory
-
Yamaguchi A
Sumitomo Electric Ind. Ltd. Yokohama Jpn
-
TAKECHI Satoshi
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
YAMAGUCHI Atsuko
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
Kamon K
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Ul
-
Morisawa T
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Ce
-
Morisawa T
Hitachi Ltd. Tokyo Jpn
-
Kuhara K
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Se
-
Kuhara Koichi
Tsukuba Research Center Sanyo Electric Co. Ltd.
-
Sasago Masaru
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address)uls
-
Ohfuji T
Semiconductor Leading Edge Technologies Inc. (selete)
-
Takechi Satoshi
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Pr
-
Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
-
Matsuzawa N
Assoc. Super‐advanced Electronics Technol. Kanagawa Pref. Jpn
-
Sasago M
Matsushita Electric Industrial Corp. Ltd.
-
Takeuchi Satoshi
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
関連論文
- フォトポリマーの研究 : 継続は力なり
- EXAFS Study on Premartensitic Phase in Nb_3Sn
- Edge and EXAFS Studies of Bi_2O_3-Y_2O_3 Oxygen Conductor
- EXAFS Studies on Fluorites of β-PbF_2 and SrF_2
- 化学酸素沃素レｰザｰ(Chemical Oxygen-Iodine Laser : COIL)の原子炉解体への応用
- Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
- Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
- 大阪府立大学中百舌鳥キャンパス
- Plasma Opening Switch Using Plasmas Produced by a Pulsed CO_2 Laser
- Proposal of a Next-Generation Super Resolution Technique
- Photolithography System Using Modified Illumination
- Photolithography System Using a Combination of Modified Illumination and Phase Shift Mask
- Photolithography System Using Annular Illumination : Photolithography
- Photolithography System Using Annular Illumination
- Performance Comparison of Real-Time Laser Absorption Spectrometers for NH_3 Detection at 1.54 and 3.03μm in a H_2O Vapor Mixture
- Measurements of NO_2 Concentration with Wide Dynamic Range Based on Laser Absorption Spectroscopy Using a Multi-Pass Optical Cell : Effects of Ambient Temperature Change at the Optical Cell
- Parametric Studies on Improved Laser Cutting Performance of Magnesium Alloy with Two Flow Nozzles
- Trace Methane Detection Based on Raman Spectroscopy Using a High Finesse Optical Resonator
- Performance Characteristics of Power Build-Up Cavity for Raman Spectroscopic Measurement
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Spatial Current Distribution Inside the Switch Region of a Plasma Opening Switch with Coaxial Configuration
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- Advanced Surface Modification Resist Process for ArF Lithography
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Removal of Water Vapor in a Mist Singlet Oxygen Generator for Chemical Oxygen Iodine Laser
- Development of a Mist Singlet Oxygen Generator
- 霧化型励起酸素発生器の基礎研究III
- Numerical Simulation of a Mist Singlet Oxygen Generator(Optics and Quantum Electronics)
- 霧化型励起酸素発生器の基礎研究II
- 霧化型励起酸素発生器の基礎研究
- エポキシ含有フルオレン : ポリシランブレンド系の光架橋
- Two-Dimensional Simulation of and Experiments on the Forward-Backward Modes Coupled Unstable Resonator
- ピロータイトFe1-xS構造中の2および3価のFeの分布
- Output Power Enhancement of a Chemical Oxygen-Iodine Laser by Predissociated Iodine Injection
- 化学酸素沃素レｰザｰ(Chemical Oxygen Iodine Laser : COIL)の高圧力動作
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- New Dry Surface-Imaging Process for X-Ray Lithography
- スルホン酸エステル含有エポキシ架橋剤を用いた再可溶化型架橋系
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist : Resist Material and Process
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- 沃素のマイクロ波放電解離を用いた超音速化学酸素沃素レｰザ
- Development of Resist Materials for EUVL
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Bilayer Resist Process for ArF Lithography
- Silylation for Carboxylic Acids
- Study of High Photo-speed Top Surface Imaging Process Using Chemically Amplified Resist
- Diffusion Kinetic of Vapor-phase Silylation Process for ArF Lithography
- Dependence of ECR Plasma Etching Characteristics on Sub Magnetic Field and Substrate Position
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- Timing Jitter Reduction in a Passively Mode-Locked Fiber Laser
- Generation of Tunable Pulses below 345 fs Using a Passively Mode-Locked Fiber Ring Laser with Bulk Components
- Waveform Shaping of a Chemical Oxygen-Iodine Laser Utilizing the Zeeman Effect
- 化学酸素沃素レｰザｰの磁場によるパルス発振
- 化学酸素沃素レーザの磁場による出力制御
- Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology
- Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- EXAFS Study on the Dehydration Process in Mg (OH)_2
- Characterization of Thin-Film Interference Effect due to Surface Roughness
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Effects of Photoacid Generator Concentration and Post-Exposure Bake Temperature on Dissolution Behavior of ArF Excimer Laser Resists
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- レーザー オリジナル Development of a Nitrogen Dioxide Gas Sensor Based on Mid-Infrared Absorption Spectroscopy
- Temperature and Concentration Dependence of Lattice Constants in Rondom Mixture of Ferroelectric and Antiferroelectric; Rb_(NH_4)_xH_2PO_4
- Characterization of Line-edge Roughness in Cu/low-k Interconnect Pattern
- Analysis of Line-edge Roughness in Resist Patterns and Its Transferability as Origins of Device Performance Degradation and Variation
- 0.10 μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light
- Simple Method for Resist Critical Dimension Prediction
- Cutting and Drilling of Inorganic Materials for Civil Engineering Using a Chemical Oxygen-Iodine Laser
- Extension of the ArF Excimer Lithography to Sub-0.10/μm Design Rule Devices Using Bi-layer Silylation Process
- Sub-0.10 μm Hole Fabrication Using Bilayer Silylation Process for 193 nm Lithography
- Approach to Next-Generation Optical Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Characterization of Line-Edge Roughness in Cu/Low-$k$ Interconnect Pattern
- Study on Electrically Plastic Devices Made with Electropolymerized Films
- 光力システムにおける窒素を用いた高効率超音速化学酸素沃素レーザー
- 光力システムにおける超音速化学励起沃素レーザーの新型 Jet type 励起酸素発生器の動作特性
- Contrast Enhancement based on Acid Equilibrium for Chemically Amplified Resists
- Journal of Photopolymer Science and Technology Award
- 193nm Lithography with Novel Highly Transparent Acid Amplifier for Chemically Amplified Resists
- Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology
- A Detection Method for a T-Topped Profile in Resist Patterns by Top-Down-View Critical Dimension Scanning Electron Microscope
- Characterization of Line Edge Roughness in Resist Patterns by Using Fourier Analysis and Auto-Correlation Function
- Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation
- Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation (Special Issue : Microprocesses and Nanotechnology)