Analysis of Line-edge Roughness in Resist Patterns and Its Transferability as Origins of Device Performance Degradation and Variation
スポンサーリンク
概要
著者
-
Yamaguchi Atsumi
Ulsi Development Center Mitsubishi Electric Corporation
-
Yamaguchi Atsuko
Central Research Laboratory Hitachi Ltd.
-
Yamaguchi Atsuko
Association Of Super-advanced Electronics Technologies:(present Address)hitachi Central Laboratory
関連論文
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- New Dry Surface-Imaging Process for X-Ray Lithography
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist : Resist Material and Process
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology
- Characterization of Thin-Film Interference Effect due to Surface Roughness
- Characterization of Line-edge Roughness in Cu/low-k Interconnect Pattern
- Analysis of Line-edge Roughness in Resist Patterns and Its Transferability as Origins of Device Performance Degradation and Variation
- 0.10 μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light
- Simple Method for Resist Critical Dimension Prediction
- Characterization of Line-Edge Roughness in Cu/Low-$k$ Interconnect Pattern
- Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology
- A Detection Method for a T-Topped Profile in Resist Patterns by Top-Down-View Critical Dimension Scanning Electron Microscope
- Characterization of Line Edge Roughness in Resist Patterns by Using Fourier Analysis and Auto-Correlation Function
- Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation
- Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation (Special Issue : Microprocesses and Nanotechnology)