A Detection Method for a T-Topped Profile in Resist Patterns by Top-Down-View Critical Dimension Scanning Electron Microscope
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概要
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A new detection method for a T-topped profile in resist patterns is proposed. This method can determine a T-topped tendency from only a single top-down critical dimension scanning electron microscope (CD-SEM) image. The method is based on the relationship between a cross-sectional pattern profile and a shape of a bright area near the pattern edge in the top-down image. Two kinds of indices for a T-topped tendency are obtained from line-edge roughness, width of the area and a correlation coefficient between the left and right borders of the area. Both indices agreed well with actual cross-sectional profiles of various resist patterns.
- 2004-06-15
著者
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Yamaguchi Atsuko
Central Research Laboratory Hitachi Ltd.
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Fukuda Hiroshi
Central Research Labolatory Hitachi Ltd.
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KOMURO Osamu
Hitachi High-Technologies Corporation
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YONEDA Shozo
Hitachi High-Technologies Corporation
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Iizumi Takashi
Hitachi High-technologies Corp.
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Komuro Osamu
Hitachi High-Technologies Corporation, Ichige 882, Hitachinaka-shi, Ibaraki 312-8504, Japan
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Yamaguchi Atsuko
Central Research Laboratory, Hitachi, Ltd., Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Iizumi Takashi
Hitachi High-Technologies Corporation, Ichige 882, Hitachinaka-shi, Ibaraki 312-8504, Japan
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Yoneda Shozo
Hitachi High-Technologies Corporation, Ichige 882, Hitachinaka-shi, Ibaraki 312-8504, Japan
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