Yamaguchi Atsuko | Association Of Super-advanced Electronics Technologies:(present Address)hitachi Central Laboratory

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著作論文

Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
New Dry Surface-Imaging Process for X-Ray Lithography
Effect of Anion in Developer on Dissolution Characteristics of Photoresist : Resist Material and Process
Effect of Anion in Developer on Dissolution Characteristics of Photoresist
Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology
Characterization of Line-edge Roughness in Cu/low-k Interconnect Pattern
Analysis of Line-edge Roughness in Resist Patterns and Its Transferability as Origins of Device Performance Degradation and Variation
0.10 μm Dense Hole Pattern Formation by Double Exposure Utilizing Alternating Phase Shift Mask Using KrF Excimer Laser as Exposure Light
Simple Method for Resist Critical Dimension Prediction

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