193nm Lithography with Novel Highly Transparent Acid Amplifier for Chemically Amplified Resists
スポンサーリンク
概要
著者
-
Naito T
Toshiba Corp. Kawasaki Jpn
-
Endo M
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
-
Ohfuji T
Semiconductor Leading Edge Technologies Inc. (selete)
関連論文
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Effects of Photoacid Generator Concentration and Post-Exposure Bake Temperature on Dissolution Behavior of ArF Excimer Laser Resists
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- Journal of Photopolymer Science and Technology Award
- 193nm Lithography with Novel Highly Transparent Acid Amplifier for Chemically Amplified Resists