Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
-
TAKAHASHI Makoto
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
OHFUJI Takeshi
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
SASAGO Masaru
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
Matsuo T
Semiconductor Leading Edge Technologies Inc
-
KISHIMURA Shinji
Yokohama Research Center, Association of Super-Advanced Electronics Technologies
-
Kishimura Sinji
Association Of Super-advanced Electronics Technologies:(present Address)ulsi Technology Development
-
Takahashi M
Tokyo Univ. Pharmacy And Life Sci. Tokyo Jpn
-
Takahashi M
Semiconductor Leading Edge Technologies Inc
-
Sasago Masaru
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address)uls
-
Ohfuji T
Semiconductor Leading Edge Technologies Inc. (selete)
-
Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
-
Sasago M
Matsushita Electric Industrial Corp. Ltd.
関連論文
- フォトポリマーの研究 : 継続は力なり
- Application of Zirconium Silicon Oxide Films to an Attenuated Phase-Shifting Mask in ArF Lithography
- 大阪府立大学中百舌鳥キャンパス
- Magnetic Domain Structure of Fe_3Al Alloy with Two-Phase Mixture Studied by Lorentz Microscopy
- Study of the Temperature Dependence of the Magnetization Direction in Cobalt Single Crystals by 1 MV Lorentz Electron Microscopy
- Stabilization of ZrSi_xO_y Films by Irradiation with an ArF Excimer Laser
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
- Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- エポキシ含有フルオレン : ポリシランブレンド系の光架橋
- スルホン酸エステル含有エポキシ架橋剤を用いた再可溶化型架橋系
- 新規スルホン酸エステル基を含有するエポキシポリマーの光架橋と水への再溶解
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Mechanically Stacked GaAs/GaInAsP Dual-Junction Solar Cell with High Conversion Efficiency of More than 31%
- 5×5cm^2 GaAs and GaInAs Solar Cells with High Conversion Efficiency
- Effect of Substrate Orientation on Photoluminescence of GaNAs
- Exchange-Coupled Magnetic Bilayer Media for Thermomagnetic Writing and Flux Detection
- New Recording Method Combining Thermo-Magnetic Writing and Flux Detection
- Collective Molecular Motion during V-Shaped Switching in a Smectic Liquid Crystal
- Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)
- Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization
- Deep-Submicron Single-Gate CMOS Technology Using Channel Preamorphization
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- リワーク能を有する光架橋・硬化樹脂
- 熱分解型多官能架橋剤を用いたリワーク型光架橋系
- リワーク機能を有する光架橋・硬化樹脂
- High Storage Density Optical Recording with a Stable Micro Green Second Harmonic Generation Laser Consisting of Nd:YVO4 and KTP : High Density Recording
- High Storage Density Optical Recording with a Stable Micro Green Second Harmonic Generation Laser Consisting of Nd:YVO_4 and KTP
- A Neuromagnetic Study of the Motor and Sensory Areas of the Oral Mucosa and Organs(Abstracts of Workshop in the ORAL HEALTH SCIENCE CENTER)
- Photocrosslinking of Oligomers Bearing Glycidyl Sulfonate Ester Units and Their Redissolution Property
- 水による溶解除去が可能なオキセタン部位含有光架橋性高分子 (特集:光とネットワークポリマー)
- 光重合
- Photocrosslinking and Thermal Degradation of Epoxy-containing Polymers Using Photobase Generators
- 超微細加工用フォトレジスト材料
- Effect of Anions on Photoreacitivity and Stability of Quaternary Ammonium Salts as Photobase Generators
- 光酸・塩基発生剤の開発とその新規フォトポリマー設計における活用
- 再溶解型光架橋・硬化樹脂
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo-Induced Radical Polymerization Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo- and Thermochemical Behavior of Quaternary Ammonium Thiocyanates and Their Use as Crosslinkers
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Effects of Photoacid Generator Concentration and Post-Exposure Bake Temperature on Dissolution Behavior of ArF Excimer Laser Resists
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- ポリビニルアルコ-ル存在下における塩化第二鉄の光還元反応
- 熱分解型ジエポキシ化合物を用いた再可溶化型架橋性高分子
- Fundamental study of the mask topography effect on the advanced phase-shifting masks for next-generation lithography (Special issue: Microprocesses and nanotechnology)
- Approach to Next-Generation Optical Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Increased Band 3 Protein Aggregation and Anti-band 3 Binding of Erythrocyte Membranes on Treatment with Sesamol
- Completely Erasable Phase Change Optical Disc II: Application of Ag-In-Sb-Te Mixed-Phase System for Rewritable Compact Disc Compatible with CD-Velocity and Double CD-Velocity
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System
- Basic Studies on 5-(7-Hydroxy-3-O-phosphonocholyl)aminosalicylic Acid for the Evaluation of Microbial Overgrowth
- High Linear Density Recording of 0.3 μm Domain Length on Magneto-Optical Disk : DRIVE TECHNOLOGY II
- High-Density Magneto-Optic Disk Using Highly Controlled Pit-Edge Recording : POST DEADLINE PAPERS
- Neuromagnetic Analysis of Hand Precision Movement Using Magnetoencephalography (MEG)(Abstracts of Workshop in the ORAL HEALTH SCIENCE CENTER)
- 亜臨界水を用いた架橋樹脂の分解とケミカルリサイクル (特集 ポリマーの分解とその応用技術)
- FRPの分解とリサイクル (特集:廃棄物の再資源化技術)
- Development of Novel Photosensitive Polymer Systems Using Photoacid and Photobase Generators
- Visible Light Crosslinking of Polymeric Photobase Generators Using Ketobiscoumarins
- Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
- 解説記事 再可溶化できる光架橋型高分子
- グリーンケミストリーと高分子の崩壊と安定化 (特集 グリーンテクノロジーの新展開)
- 高分子材料の光分解性と高分子添加剤 (新春特集 高分子添加剤の開発とグリーンケミストリー)
- 再溶解能を有する光架橋性ポリマー
- メタクリル酸メチル-アクリル酸エステル共重合体の185nm光によるアブレーティブ分解
- Photocrosslinking of Polymers with Ether Units Using Imino Sulfonate Photoacid Generators
- Contrast Enhancement based on Acid Equilibrium for Chemically Amplified Resists
- ポリクラウンエ-テルを用いるイオンクロマトグラフィ-
- 光2量化型ポリマ-
- Journal of Photopolymer Science and Technology Award
- 193nm Lithography with Novel Highly Transparent Acid Amplifier for Chemically Amplified Resists
- 光によるアミンの生成を利用する表面修飾型フォトレジスト
- 表面イメ-ジング法によるフォトリソグラフィ-と水の収着
- 表面修飾を利用したフォトレジスト
- UV/EB硬化技術--高分子材料への活用 (小特集 UV/EB硬化技術の最新の展開)
- リワーク型低収縮ジメタクリラートとそのUVインプリント材料への応用 : 樹脂構造の影響 (特集 光とネットワークポリマー)