FRPの分解とリサイクル (特集:廃棄物の再資源化技術)
スポンサーリンク
概要
著者
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白井 正充
大阪府立大学大学院工学研究科
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Sasago M
Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn
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Suyama Kanji
Department Of Applied Chemistry Osaka Prefecture University
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Sasago M
Matsushita Electric Industrial Corp. Ltd.
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Shirai Masamitsu
Osaka Prefecture Univ. Osaka Jpn
関連論文
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- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
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- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
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- Fundamental study of the mask topography effect on the advanced phase-shifting masks for next-generation lithography (Special issue: Microprocesses and nanotechnology)
- Approach to Next-Generation Optical Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
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- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
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- Crosslinking of Oligomers Utilizing Sensitized Photoreaction at 366 nm and Thermal Decomposition of Pendant Carbamoyloxyimino Groups
- Photo-Crosslinking of Poly(glycidyl methacrylate) Using Di-functional Photobase Generators
- Development of Novel Photosensitive Polymer Systems Using Photoacid and Photobase Generators
- Visible Light Crosslinking of Polymeric Photobase Generators Using Ketobiscoumarins
- Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
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- 解説記事 再可溶化できる光架橋型高分子
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