解説記事 再可溶化できる光架橋型高分子
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概要
著者
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Sasago M
Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
関連論文
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- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
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- 新規スルホン酸エステル基を含有するエポキシポリマーの光架橋と水への再溶解
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
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- 光重合
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- 超微細加工用フォトレジスト材料
- Effect of Anions on Photoreacitivity and Stability of Quaternary Ammonium Salts as Photobase Generators
- 光酸・塩基発生剤の開発とその新規フォトポリマー設計における活用
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- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo-Induced Radical Polymerization Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo- and Thermochemical Behavior of Quaternary Ammonium Thiocyanates and Their Use as Crosslinkers
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- ポリビニルアルコ-ル存在下における塩化第二鉄の光還元反応
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- Fundamental study of the mask topography effect on the advanced phase-shifting masks for next-generation lithography (Special issue: Microprocesses and nanotechnology)
- Approach to Next-Generation Optical Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System
- Cyclic O-Acyloximes as Novel Photolatent Bases
- Enhanced photochemical generation of amines from trifunctional O-acyloxime
- 亜臨界水を用いた架橋樹脂の分解とケミカルリサイクル (特集 ポリマーの分解とその応用技術)
- FRPの分解とリサイクル (特集:廃棄物の再資源化技術)
- Development of Novel Photosensitive Polymer Systems Using Photoacid and Photobase Generators
- Visible Light Crosslinking of Polymeric Photobase Generators Using Ketobiscoumarins
- Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
- Negative EUV resist based on thiol-ene system
- Non-chemically amplified EUV resist based on PHS
- 解説記事 再可溶化できる光架橋型高分子
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- 高分子材料の光分解性と高分子添加剤 (新春特集 高分子添加剤の開発とグリーンケミストリー)
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- メタクリル酸メチル-アクリル酸エステル共重合体の185nm光によるアブレーティブ分解
- Photocrosslinking of Polymers with Ether Units Using Imino Sulfonate Photoacid Generators
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- Analysis of chain propagation in UV curing using reworkable resin
- i-Line sensitive photoacid generators using thianthrenium derivatives
- I-line sensitive non-ionic photoacid generators having thianthrene skeleton
- Degradable Network Polymers Based on Di(meth)acrylates
- Highly Sensitive Photocrosslinking System Using Fluorene Derivatives Having Vinyl Ether or Epoxy Moiety
- Multi-Functional Methacrylates Bearing Thermal Degradation Properties--Synthesis, Photo- and Thermal Curing, and Thermolysis
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