再溶解型光架橋・硬化樹脂
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概要
著者
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白井 正充
大阪府立大学大学院工学研究科
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Sasago M
Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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白井 正充
大阪府立大学 大学院 工学研究科
関連論文
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- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
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- スルホン酸エステル含有エポキシ架橋剤を用いた再可溶化型架橋系
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- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- リワーク能を有する光架橋・硬化樹脂
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- リワーク機能を有する光架橋・硬化樹脂
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- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo-Induced Radical Polymerization Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo- and Thermochemical Behavior of Quaternary Ammonium Thiocyanates and Their Use as Crosslinkers
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- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
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- Fundamental study of the mask topography effect on the advanced phase-shifting masks for next-generation lithography (Special issue: Microprocesses and nanotechnology)
- Approach to Next-Generation Optical Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System
- Cyclic O-Acyloximes as Novel Photolatent Bases
- Enhanced photochemical generation of amines from trifunctional O-acyloxime
- 亜臨界水を用いた架橋樹脂の分解とケミカルリサイクル (特集 ポリマーの分解とその応用技術)
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- Development of Novel Photosensitive Polymer Systems Using Photoacid and Photobase Generators
- Visible Light Crosslinking of Polymeric Photobase Generators Using Ketobiscoumarins
- Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
- Negative EUV resist based on thiol-ene system
- Non-chemically amplified EUV resist based on PHS
- 解説記事 再可溶化できる光架橋型高分子
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- Photocrosslinking of Polymers with Ether Units Using Imino Sulfonate Photoacid Generators
- ポリクラウンエ-テルを用いるイオンクロマトグラフィ-
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- Preparation of replicated resin mold for UV nanoimprint using reworkable dimethacrylate
- Analysis of chain propagation in UV curing using reworkable resin
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- I-line sensitive non-ionic photoacid generators having thianthrene skeleton
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- Highly Sensitive Photocrosslinking System Using Fluorene Derivatives Having Vinyl Ether or Epoxy Moiety
- Multi-Functional Methacrylates Bearing Thermal Degradation Properties--Synthesis, Photo- and Thermal Curing, and Thermolysis
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- 熱分解型多官能架橋剤を用いたりワーク型光架橋系
- 水による溶解除去が可能なオキセタン部位含有光架橋性高分子