UV/EB硬化技術--高分子材料への活用 (小特集 UV/EB硬化技術の最新の展開)
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概要
著者
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白井 正充
大阪府立大学大学院工学研究科
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Sasago M
Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Sasago M
Matsushita Electric Industrial Corp. Ltd.
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Shirai Masamitsu
Osaka Prefecture Univ. Osaka Jpn
関連論文
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- 大阪府立大学中百舌鳥キャンパス
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- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Characterization of Chemically Amplified Resists with"Acid Amplifier"for 193nm Lithography
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- エポキシ含有フルオレン : ポリシランブレンド系の光架橋
- スルホン酸エステル含有エポキシ架橋剤を用いた再可溶化型架橋系
- 新規スルホン酸エステル基を含有するエポキシポリマーの光架橋と水への再溶解
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
- Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
- リワーク能を有する光架橋・硬化樹脂
- 熱分解型多官能架橋剤を用いたリワーク型光架橋系
- リワーク機能を有する光架橋・硬化樹脂
- 溶かす フォトレジスト--性能を決める溶解特性
- Photocrosslinking of Oligomers Bearing Glycidyl Sulfonate Ester Units and Their Redissolution Property
- 水による溶解除去が可能なオキセタン部位含有光架橋性高分子 (特集:光とネットワークポリマー)
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- Photocrosslinking and Thermal Degradation of Epoxy-containing Polymers Using Photobase Generators
- 超微細加工用フォトレジスト材料
- Effect of Anions on Photoreacitivity and Stability of Quaternary Ammonium Salts as Photobase Generators
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- 再溶解型光架橋・硬化樹脂
- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo-Induced Radical Polymerization Sensitized by Benzoquinonylsulfanyl Derivatives
- Photo- and Thermochemical Behavior of Quaternary Ammonium Thiocyanates and Their Use as Crosslinkers
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- ポリビニルアルコ-ル存在下における塩化第二鉄の光還元反応
- 熱分解型ジエポキシ化合物を用いた再可溶化型架橋性高分子
- Fundamental study of the mask topography effect on the advanced phase-shifting masks for next-generation lithography (Special issue: Microprocesses and nanotechnology)
- Approach to Next-Generation Optical Lithography
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
- Surface Modification Resists Using Photoacid and Photobase Generating Polymers
- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
- Positive Surface Modification Resist System
- Cyclic O-Acyloximes as Novel Photolatent Bases
- Enhanced photochemical generation of amines from trifunctional O-acyloxime
- 亜臨界水を用いた架橋樹脂の分解とケミカルリサイクル (特集 ポリマーの分解とその応用技術)
- FRPの分解とリサイクル (特集:廃棄物の再資源化技術)
- Development of Novel Photosensitive Polymer Systems Using Photoacid and Photobase Generators
- Visible Light Crosslinking of Polymeric Photobase Generators Using Ketobiscoumarins
- Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
- Negative EUV resist based on thiol-ene system
- Non-chemically amplified EUV resist based on PHS
- 解説記事 再可溶化できる光架橋型高分子
- グリーンケミストリーと高分子の崩壊と安定化 (特集 グリーンテクノロジーの新展開)
- 高分子材料の光分解性と高分子添加剤 (新春特集 高分子添加剤の開発とグリーンケミストリー)
- 再溶解能を有する光架橋性ポリマー
- メタクリル酸メチル-アクリル酸エステル共重合体の185nm光によるアブレーティブ分解
- Photocrosslinking of Polymers with Ether Units Using Imino Sulfonate Photoacid Generators
- ポリクラウンエ-テルを用いるイオンクロマトグラフィ-
- 光2量化型ポリマ-
- Preparation of replicated resin mold for UV nanoimprint using reworkable dimethacrylate
- Analysis of chain propagation in UV curing using reworkable resin
- i-Line sensitive photoacid generators using thianthrenium derivatives
- I-line sensitive non-ionic photoacid generators having thianthrene skeleton
- Degradable Network Polymers Based on Di(meth)acrylates
- Highly Sensitive Photocrosslinking System Using Fluorene Derivatives Having Vinyl Ether or Epoxy Moiety
- Multi-Functional Methacrylates Bearing Thermal Degradation Properties--Synthesis, Photo- and Thermal Curing, and Thermolysis
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- リワーク型低収縮ジメタクリラートとそのUVインプリント材料への応用 : 樹脂構造の影響 (特集 光とネットワークポリマー)
- 熱分解型多官能架橋剤を用いたりワーク型光架橋系
- 水による溶解除去が可能なオキセタン部位含有光架橋性高分子