熱分解型ジエポキシ化合物を用いた再可溶化型架橋性高分子
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概要
著者
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白井 正充
大阪府立大学大学院工学研究科
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Sasago M
Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Sasago M
Matsushita Electric Industrial Corp. Ltd.
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Shirai Masamitsu
Osaka Prefecture Univ. Osaka Jpn
関連論文
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- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
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- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
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- Theoretical Calculations of Sensitivity of Deprotection Reactions for Acrylic Polymers for 193nm Lithography II : Protection Groups Containing an Adamantyl Unit
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
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- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
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- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Sulfonic Acid Generating Polymers for 146 nm Irradiation
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- Cyclic O-Acyloximes as Novel Photolatent Bases
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- Non-chemically amplified EUV resist based on PHS
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- ポリクラウンエ-テルを用いるイオンクロマトグラフィ-
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