Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
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概要
著者
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Kishimura Sinji
Association Of Super-advanced Electronics Technologies:(present Address)ulsi Technology Development
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Sasago M
Matsuisita Electric Industrial Co. Ltd. Kyoto Jpn
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
関連論文
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- Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
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- Visible Light Crosslinking of Polymeric Photobase Generators Using Ketobiscoumarins
- Poly(α-methyl-p-hydroxystyrene-co-methacrylonitrile) Based Single-Layer Resists for VUV Lithography (2) F2 Excimer Laser Exposure Characteristics
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