Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
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概要
- 論文の詳細を見る
This paper describes the potential of KrF excimer laser lithography for the development and production of M and 256 Mbit DRAMs on the basis of our recent developed results. Quarter micron KrF excimer laser lithography has been developed. A new chemically amplified positive resist realizes high stability and process compatibility for 0.25 micron line and space patterns and 0.35 micron contact hole patterns. This developed resist is characterized as the increase of dissolution characteristics in exposed areas, and hence means the high resolution is obtained. A multiple interference effect was greatly reduced by using our over coat film or anti-reflective coating. This over coat film has no intermixing to the resist and it is simultaneously removed when the resist is developed. This anti-reflective coating has low etch selectivity to the resist, and hence the over coat film is etched away when etching the substrate. The two major results indicate that the KrF excimer laser lithography is promising for the development of 256 MDRAMs.
- 社団法人電子情報通信学会の論文
- 1993-04-25
著者
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Kitamura T
Material And Life Science Graduate School Of Engineering Osaka University
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ENDO Masamori
Department of Physics, School of Science, Tokai University
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Matsuo Taku
The Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Endo M
Department Of Physics School Of Science Tokai University
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MATSUO Takahiro
Semiconductor Leading Edge Technologies, Inc.
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Yamashita K
Graduate School Of Engineering Osaka Prefecture University
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Matsuo T
Matsushita Electric Industrial Co. Ltd. (panasonic)
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Matsuo T
The Author Is With The Tr Production Division Rohm-apollo Device Co. Ltd.
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Sasago Masaru
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Yamashita Kazuhiro
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Endo Masayuki
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Koizumi Taichi
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Nomura Noboru
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Tani Yoshiyuki
Semiconductor Research Center, Matsushita Electric Industrial Co. Ltd.
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Kobayashi Satoshi
Semiconductor Research Center, Matsushita Electric Industrial Co. Ltd.
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Kitamura Takayuki
Material And Life Science Graduate School Of Engineering Osaka University
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Yamashita K
Osaka Prefecture Univ. Sakai‐shi Jpn
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Nomura N
Semiconductor Research Center Matsushita Electric Industrial Company Ltd.
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Nomura Noboru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Sasago Masaru
Semiconductor Research Center Matsushita Electric Industrial Co. Lid.
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Koizumi T
Nihon Spindle Mfg. Co. Ltd.
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Tani Yoshiyuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Matsuo Takahiro
Matsushita Electric Industrial Co. Ltd. (panasonic)
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Yamashita Kazuhiro
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Kishima Takamasa
Nihon Spindle Mfg. Co. Ltd.
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Sasago M
Assoc. Super‐advanced Electronics Technol. Yokohama Jpn
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Tsunooka M
Osaka Prefecture Univ. Osaka Jpn
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Endo Masayuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Koizumi Taichi
Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570
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