Submicron 3-Dimensional Structure Observation by Cyclotron SEM(Scanning Electron Microscope)
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概要
- 論文の詳細を見る
Experimental and numerical approaches have been taken to the study of the brightness of scanning electron microscope(SEM) images for bottom surfaces of deep holes and trenches by Cyclotron SEM. Secondary electrons emitted from the bottom are efficiently collected as an image signal by a couple of the following combinational effects. One is an electrostatic converging lens due to accumulated negative charges on the side wall of holes and trenches. The other i s a strong magnetic field above the specimen surface generated by an immersion-type objective lens. The former plays the role of reducing the number of electrons which collide with the side wall. The latter binds diverged secondary electrons leaving from the specimen surface and introduces electrons into a detector.
- 社団法人応用物理学会の論文
- 1991-11-30
著者
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Koizumi Taichi
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Nomura Noboru
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Koizumi Tomoyoshi
Nishiki Research Laboratories Kureha Chemical Industry Co. Ltd.
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Nomura N
Semiconductor Research Center Matsushita Electric Industrial Company Ltd.
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Nomura Noboru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Harafuji K
Matsushita Electric Ind. Co. Ltd. Osaka Jpn
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Harafuji Kenji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Harafuji Kenji
Department Of Nuclear Engineering Faculty Of Engineering Tohoku University:(present Address) Institu
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Harafuji Kenji
Semiconductor Research Center Matsushita Electric Industrial Co.
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Koizumi Taichi
Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570
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