Development Methods for Submicron Optical Lithography
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概要
- 論文の詳細を見る
The effects of development methods on resist pattern fabrication have been examined. The automated immersion, puddle and spray development methods can be compared and characterized. The immersion development could fabricate high-aspect-ratio 0.6 micron line-and space patterns and had the largest process latitude for submicron optical lithography. The spray development has been found not to be good except for sensitivity.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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NAKAGAWA Hideo
Semiconductor Company, Matsushita Electric Industrial Co. Ltd.
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Nomura Noboru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Sasago Masaru
Semiconductor Research Center Matsushita Electric Industrial Co. Lid.
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Endo Masayuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Sasago Masaru
Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd., Moriguchi 570
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Ueno Atsushi
Semiconductor Research Center, Matsushita Electric Ind. Co. Ltd., Moriguchi 570
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