Sasago Masaru | Semiconductor Research Center Matsushita Electric Industrial Co. Lid.

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著作論文

New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
Tunnel Structured Stacked Capacitor Cell (TSSC) with High Reliability for 64 Mbit dRAMs and Formation of Oxide-Nitride-Oxide Film (ONO) on 3-dimensionally (3d) Storage Electrode
Novel Silicon-Containing Negative Resist for Bilayer Application in Electron Beam Direct Writing
Application of Photobleachable Positive Resist and Contrast Enhancement Material to KrF Excimer Laser Lithography
Development Methods for Submicron Optical Lithography
High-Aspect-Ratio Alkaline Surface Treatment Method of Dyed Photoresist

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