Tsunooka M | Osaka Prefecture Univ. Osaka Jpn

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著作論文

Sob-0.1-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging (TSI) Process
Advanced Surface Modification Resist Process for ArF Lithography
New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
Phase-Transfer Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCl4 in an Aqueous-Organic Two-Phase System
Phase-Transfer Photopolymerization of Methyl Methacrylate with Tetrabutylammonium Chloride-KSCN-CCI_4 in an Aqueous-Organic Two-Phase System
Photopolymerization of Methyl Methacrylate with N-Cetylpyridinium Chloride-KSCN-CCI_4 in Aqueous System
Photodegradation of Poly(methacrylates), Poly(acrylates) and Polystyrenes Derivatives by 146 nm Light
Surface Modification Resists Using Photoacid and Photobase Generating Polymers
Photolysis of Quaternary Ammonium Dithiocarbamates and Their Use as Photobase Generators
Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
Sulfonic Acid Generating Polymers for 146 nm Irradiation
Positive Surface Modification Resist System

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