Application of Photobleachable Positive Resist and Contrast Enhancement Material to KrF Excimer Laser Lithography
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we present the application of photobleachable positive deep-UV resist and contrast enhancement material (CEM) to KrF excimer laser lithography. The effects of the photobleaching characteristics of the resist and CEM on the resist pattern angles and profiles were examined and optimization of these materials was performed. High-aspect-ratio 0.5 $\mu$m-line-and-space patterns were successfully obtained by optimization of the materials. PROLITH (positive resist optical lithography model) has excellently reproduced actual pattern profiles.
- 1989-11-20
著者
-
Sasago Masaru
Semiconductor Research Center Matsushita Electric Industrial Co. Lid.
-
Tani Yoshiyuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
NOMURA Noburu
Semiconductor Research Center, Matsushita Electric Ind.
-
Das Siddhartha
Components Research Ontel Corporation
-
Endo Masayuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
Sasago Masaru
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570
-
Tani Yoshiyuki
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570
-
Nomura Noburu
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570
関連論文
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- A KrF Excimer Laser Lithography for Half Micron Devices : Techniques, Instrumentations and Measurement
- Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Tunnel Structured Stacked Capacitor Cell (TSSC) with High Reliability for 64 Mbit dRAMs and Formation of Oxide-Nitride-Oxide Film (ONO) on 3-dimensionally (3d) Storage Electrode
- Novel Silicon-Containing Negative Resist for Bilayer Application in Electron Beam Direct Writing
- Application of Photobleachable Positive Resist and Contrast Enhancement Material to KrF Excimer Laser Lithography
- Development Methods for Submicron Optical Lithography
- High-Aspect-Ratio Alkaline Surface Treatment Method of Dyed Photoresist