0.1 μm Fine-Pattern Fabrication Using Variable-Shaped Electron Beam Lithography
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概要
- 論文の詳細を見る
It is shown that fine patterns with 0.1 μm feature size can be obtained based on a new method of multiple-shot exposure with a variable-shaped electron beam lithography system.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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HASHIMOTO Kazuhiko
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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Nomura Noboru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Kawakita Kenji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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HIRAI Yoshihiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Yasuda Masaaki
College Of Engineering University Of Osaka Prefecture
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MURATA Kenji
College of Engineering, University of Osaka Prefecture
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Hirai Yoshihiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Hashimoto Kazuhiko
Semiconductor Device Engineering Laboratory Toshiba Corporation
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Murata Kenji
College Of Engineering University Of Osaka Prefecture
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HASHIMOTO Kazuhiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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