Computer Aided Proximity Effect Correction System in Photolithography
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概要
- 論文の詳細を見る
Reflected light from step coverage causes fatal pattern defects in photolithography. The resist pattern defects are caused by the extra exposure from the highly reflective stepped substrate, such as breaks in the pattern of the aluminum layer. The problem is significant when the patterns in the different layers are near each other. We named this problem the proximity effect. The specific design rules such as the space between the resist pattern and the steps on the substrate are evaluated by simulation and experiment. Based on the evaluated results, we propose a computer aided proximity effect correction system to verify the pattern layout and eliminate the proximity effect. The effectiveness of the system is confirmed experimentally.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Misaka Akio
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Nomura Noboru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Yamashita Kazuhiro
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Harafuji Kenji
Semiconductor Research Center Matsushita Electric Industrial Co.
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Hayama Shigeru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Hirai Yoshihiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Misaka Akio
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, 570 Japan
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Harafuji Kenji
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, 570 Japan
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Yamashita Kazuhiro
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka, 570 Japan
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