Computer Aided Proximity Effect Correction System in Photolithography : Lithography Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-30
著者
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Yamashita Kazuhiro
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Nomura Noboru
Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd.
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Misaka Akio
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Nomura N
Semiconductor Research Center Matsushita Electric Industrial Company Ltd.
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Nomura Noboru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Yamashita Kazuhiro
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Harafuji Kenji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Harafuji Kenji
Semiconductor Research Center Matsushita Electric Industrial Co.
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HIRAI Yoshihiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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HAYAMA Shigeru
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Hayama Shigeru
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Hirai Yoshihiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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HARAFUJI Kenji
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
関連論文
- New Technologies of KrF Excimer Laser Lithography System in 0.25 Micron Complex Circuit Patterns (Special Issue on Quarter Micron Si Device and Process Technologies)
- Quarter Micron KrF Excimer Laser Lithography (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- A New Photobleachable Positive Resist for KrF Excimer Laser Lithography : Advanced III-V Compound Semiconductors and Silicon Devices(Solid State Devices and Materials 1)
- Overlay Accuracy Measurement Technique Using the Latent Image on a Chemically Amplified Resist
- A New Analytical Technique for Evaluating Standing Wave Effect of Chemically Amplified Positive Resist
- New Evaluation Method of Resist Coating Using Heterodyne Holographic Wafer Alignment
- Application of Photobleachable Positive Resist and contrast Enhancement Material to KrF Excimer Laser Lithography : Resist Material and Process
- Novel Surface Reaction Model in Dry-Etching Process Simulator
- Computer Aided Proximity Effect Correction System in Photolithography : Lithography Technology
- Quantitative Evaluation of Gate Oxide Damage during Plasma Processing Using Antenna-Structure Capacitors
- Lissajous Electron Plasma (LEP) Generation for Dry Etching
- RF Glow Discharge and Ion Transport : Effects of Applied Frequency, Gas Pressure and Method of Power Coupling
- Scaling of Ion Transport Based on Frequency and Pressure in a Parallel-Plate RF Glow Discharge
- Submicron 3-Dimensional Structure Observation by Cyclotron SEM(Scanning Electron Microscope) : Inspection and Testing
- Submicron 3-Dimensional Structure Observation by Cyclotron SEM(Scanning Electron Microscope)
- A Novel High-Resolution Scanning Electron Microscope for the Surface Analysis of High-Aspect-Ratio Three-Dimensional Structures
- 0.1 μm Fine-Pattern Fabrication Using Variable-Shaped Electron Beam Lithography
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- Fabrication and Transport Properties of Silicon Quantum Wire Gate-All-Around Transistor
- Development Methods for Submicron Optical Lithography
- High-Aspect-Ratio Alkaline Surface Treatment Method of Dyed Photoresist
- An E-Beam Direct Write Process for 16M-Bit DRAMs
- Computer Aided Proximity Effect Correction System in Photolithography
- Fabrication and Transport Properties of Silicon Quantum Wire Gate-All-Around Transistor