Scaling of Ion Transport Based on Frequency and Pressure in a Parallel-Plate RF Glow Discharge
スポンサーリンク
概要
- 論文の詳細を見る
Scaling relations for several plasma parameters and ion energy/angular distribution have been investigated as a function of gas pressure P and driving frequency f in a parallel-plate RF glow discharge of argon plasma under constant DC and RF voltages. A fluid glow discharge simulation shows that sheath length L_<sh> approximately scales as P^<-1/2>f^<-1/2>, indicating that the collision probability, η=L_<sh>/λ_i (λ_i=ion mean free path), is proportional to √<P/f>. The ion flux, F_i, at the cathode shows dissimilar scaling with f and P as F_i∝P^<0.57>f^<1.42> in spite of similar scaling of plasma density n_p ∝P^<1.73>f^<1.53>. Monte Carlo simulation of the ion transport within the sheath region and the plasma parameter scalings suggest that the combined operation of low pressure typically less than 10 Pa and high frequency typically greater than 100 MHz provides promising conditions for anisotropic profile formation and high etching rate through independent control of ion flux and ion energy/angular distribution.
- 社団法人応用物理学会の論文
- 1995-04-15
著者
-
Harafuji Kenji
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
Harafuji Kenji
Semiconductor Research Center Matsushita Electric Industrial Co.
関連論文
- Novel Surface Reaction Model in Dry-Etching Process Simulator
- Computer Aided Proximity Effect Correction System in Photolithography : Lithography Technology
- Lissajous Electron Plasma (LEP) Generation for Dry Etching
- RF Glow Discharge and Ion Transport : Effects of Applied Frequency, Gas Pressure and Method of Power Coupling
- Scaling of Ion Transport Based on Frequency and Pressure in a Parallel-Plate RF Glow Discharge
- Submicron 3-Dimensional Structure Observation by Cyclotron SEM(Scanning Electron Microscope) : Inspection and Testing
- Submicron 3-Dimensional Structure Observation by Cyclotron SEM(Scanning Electron Microscope)
- A Novel High-Resolution Scanning Electron Microscope for the Surface Analysis of High-Aspect-Ratio Three-Dimensional Structures
- An E-Beam Direct Write Process for 16M-Bit DRAMs
- Computer Aided Proximity Effect Correction System in Photolithography