Fabrication and Transport Properties of Silicon Quantum Wire Gate-All-Around Transistor
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概要
- 論文の詳細を見る
A novel fabrication method of silicon quantum wire gate-all-around transistor (GAAT), in which the gate oxide and the gate electrode are wrapped around ultrafine silicon quantum wire, has been proposed. In order to verify one-dimensional (1D) subband effects, we have studied quantum transport in Si quantum wire GAAT with a width of 50 nm at 1.5 K in zero-magnetic field and in fields up to 10 T. Electrical population and magnetic depopulation of 1D subbands are clearly observed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Yuki Koichirou
Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Morita Kiyoyuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Morimoto Kiyoshi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Hirai Yoshihiko
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Morimoto Kiyoshi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.,
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Morita Kiyoyuki
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.,
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Hirai Yoshihiko
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.,
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