Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching

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概要

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• We have demonstrated a novel method of fabricating Si nanostructures. Based on a combination of atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching, Si nanostructures with a minimum width of 50 nm are successfully obtained within the intended area with precise alignment. Overlay patterning followed by AFM field-enhanced oxidation is carried out with high accuracy. It is confirmed that the field-enhanced oxide line with a thickness of at least about 3 nm can act as an mask against anisotropic wet chemical etching. This method enables the realization of sub-10 nm Si nanostructures.

• 社団法人応用物理学会の論文
• 1996-12-30

著者

• Niwa M

  Matsushita Electronics Corp. Kyoto Jpn

• Niwa M

  Ulsi Process Technology Development Center Matsushita Electronics Corp.

• Niwa M

  Department Of Materials Science And Engineering Tokyo Denki University

• Niwa Masaaki

  Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.

• Araki Kiyoshi

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Hirai Yoshihiko

  College Of Engineering Osaka Prefecture Univirsity

• Morita Kiyoyuki

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

• Morimoto Kiyoshi

  Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.

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