Time Dependent Resistance Increase in Poly-Si Load Resistor due to Hydrogen Diffusion from Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film in High Density Static Random Access Memories

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-03-15

著者

• Shibata Hideki

  Semiconductor Device Engineering Laboratory Toshiba Corporation

• HASHIMOTO Kazuhiko

  Semiconductor Device Engineering Laboratory, Toshiba Corporation

• Hashimoto Kazuhiko

  Semiconductor Device Engineering Laboratory Toshiba Corporation

関連論文

• Time Dependent Resistance Increase in Poly-Si Load Resistor due to Hydrogen Diffusion from Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film in High Density Static Random Access Memories
• The Damage Energy Transfer to Interfacial Oxide by Phosphorus Ion Implantation for Small Geometry Polysilicon to Polysilicon Contact
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• The Effects of Al(111) Crystal Orientation on Electromigration in Half-Micron Layered Al Interconnects
• 0.1 μm Fine-Pattern Fabrication Using Variable-Shaped Electron Beam Lithography
• Novel Silicon-Containing Negative Resist for Bilayer Application in Electron Beam Direct Writing
• An E-Beam Direct Write Process for 16M-Bit DRAMs

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