Progress in Top Surface Imaging Process

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Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
The Emergence of Alternative Developers for Extreme Ultraviolet Lithography
Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
Dissolution Characteristics of Chemically Amplified DUV Resists
Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists
A Study of Photoacid Structure Dependence on Lithographic Performance in Chemically Amplified Resists
Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
Fabrication of 65-nm Holes for 157-nm Lithography
Extension of the ArF Excimer Lithography to Sub-0.10/μm Design Rule Devices Using Bi-layer Silylation Process
Sub-0.10 μm Hole Fabrication Using Bilayer Silylation Process for 193 nm Lithography
Deblocking Reaction of Chemically Amplified Positive DUV Resists
Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
Characterization of Fluoropolymer Resist for 157-nm Lithography
Progress in Top Surface Imaging Process
Process Characterization of Bi-layer Silylation Process for l93-nm Lithography
Dissolution Kinetics Analysis for Chemically Amplified Deep Ultraviolet Resist
Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography
Fabrication of 65-nm Holes for 157-nm Lithography
Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
Development of 157 nm Resist Using Highly Exact Theoretical Calculation of Absorption Spectra
Multicomponent negative-type photoresist based on Noria analog with 12 ethoxy groups
A Nonaqueous Potentiometric Titration Study of the Dissociation of t - Butyl Methacrylate - Methacrylic Acid Copolymers
157-nm Resist Material Design for Improvement of Its Transparency Using Highly Precise Theoretical Calculation
Evaluation of High-Transmittance Attenuated Phase Shifting Mask for 157 nm Lithography
In situ Characterization of Photoresist Dissolution
Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
Study of Bi-layer Silylation Process for 193 nm Lithography
Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
Reaction Mechanism of Extreme Ultraviolet Resists
Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
In-situ Contamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU
Extreme Ultraviolet Resist Fabricated Using Water Wheel-Like Cyclic Oligomer with Pendant Adamantyl Ester Groups
Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
A Study of Molecular Orientation Effect in Photoresist Films
Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
Diffusion Control Using Matrix Change during Chemical Reaction for Inducing Anisotropic Diffusion in Chemically Amplified Resists

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