157-nm Resist Material Design for Improvement of Its Transparency Using Highly Precise Theoretical Calculation
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概要
- 論文の詳細を見る
Vacuum ultraviolet (VUV) absorption spectra of resist materials for 157 nm lithography were calculated theoretically by the symmetry adapted cluster configuration interaction (SAC-CI) method. In this study, we investigated the excited states of several alkanes and fluorinated alkanes in the VUV region, and found that most of the transitions of the evaluated alkanes are Rydberg-like transitions. Furthermore, we found a good linear correlation between the lowest absorption energy of alkane and its highest occupied orbital (HOMO) energy. This suggests that consideration of these HOMO energies could be an effective way to explain the change in VUV spectra by fluorination. We also investigated the molecular structures of fluorinated norbornanes to improve their transparency at the VUV region. Through our SAC-CI spectroscopic calculations and evaluation of the HOMO energies for the norbornane derivatives, it was found that fluorination at positions 1, 2, 4 and 5 of norbornane is an efficient molecular method for improving transparency in the VUV region.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Itani Toshiro
Semiconductor Leading Edge Technologies Inc.
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Yamazaki Tamio
Semiconductor Leading Edge Technologies Inc.
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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