Development of 157 nm Resist Using Highly Exact Theoretical Calculation of Absorption Spectra
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概要
- 論文の詳細を見る
Vacuum ultraviolet (VUV) absorption spectra of organic materials were calculated theoretically by the symmetry-adapted cluster-configuration interaction (SAC-Cl) method to establish a molecular design for high-transparency resist materials to be used in 157 nm lithography. We investigated several saturated hydrocarbons and fluorinated compounds, and obtained low prediction error of absorption peaks (< 0.25 eV, in the case of formaldehyde). High-precision prediction enables exact assignment of an absorption spectrum. The theoretical SAC-Cl spectra obtained were very close to the experimentally measured spectra. In addition, we investigated the reasons for changes occurring in VUV-absorptioa spectra when C-H bonds of alkane are substituted with C-F bonds, and found that major changes in electronic structure occur with fluorination.
- 社団法人応用物理学会の論文
- 2002-06-30
著者
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ITANI Toshiro
Semiconductor Leading Edge Technolgies, Inc.
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Itani Toshiro
Semiconductor Leading Edge Technologies Inc.
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Yamazaki Tamio
Semiconductor Leading Edge Technologies Inc.
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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