In-situ Contamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU
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概要
- 論文の詳細を見る
To reduce the influence of carbon contamination growth, which is the origin of the resist outgassing during extreme ultraviolet (EUV) exposure, it is necessary to study the relationship between the outgassing species from the resist and carbon contamination growth during EUV exposure. Thus a novel evaluation system which enable the measurement of the carbon contamination thickness on a Mo/Si multilayer witness sample by in-situ ellipsometry in the resist outgassing environment under EUV exposure was installed at the beamline in the NewSUBARU synchrotron radiation facility. The carbon contamination thickness on the witness sample measured by in-situ ellipsometry is in good agreement with those measured using an atomic microscope and by reflectivity measurement. In addition, it is found that the time dependence of the carbon growth on a witness sample is due to the difference in outgassing species from the resist samples during EUV exposure. Furthermore, for the model resist of poly(hydroxystyrene) containing the protectiive group of tertial butoxycarbonyl group with a photoacid generator (PAG) and a quencher, the time dependence of contamination thickness was mainly due to the decomposition of outgassing species of the tert-butoxycarbonyl group and the residual casting solvent, such as propyleneglycol monomethyl ether acetate. In order to evaluate the carbon contamination thickness measurement, the in-situ measurement system was moved to the 10.8-m-long undulator beamline. The EUV light intensity flux was estimated to be the same level as that required in high-volume manufacturing.
- 2011-06-25
著者
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Harada Tetsuo
Laboratory Of Environmental Physiology Faculty Of Education Kochi University
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Kinoshita Hiroo
Laboratory Of Advanced Science And Technology For Industry Himeji Institute Of Technology
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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Oizumi Hiroaki
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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Watanabe Takeo
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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Oizumi Hiroaki
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Matsuda Naohiro
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan
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Harada Tetsuo
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan
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Kinoshita Hiroo
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan
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Itani Toshiro
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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HARADA Tetsuo
Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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Watanabe Takeo
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan
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