Evaluation of High-Transmittance Attenuated Phase Shifting Mask for 157 nm Lithography

概要

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Resolution enhancement techniques (RETs) such as attenuated phase shifting masks (Att-PSMs) and alternated phase shifting masks (Alt-PSMs) show great promise as a means of realizing 70 nm node 157 nm lithography, for which expectations are high for being the next generation of lithography. Att-PSMs are particularly advantageous for application to ultra large-scale integration (ULSI) devices, because they are easier to fabricate than Alt-PSMs. However, their transmittance is an issue that requires evaluation. This paper reports our examination of high-transmittance Att-PSMs in both aerial image simulation and experiments to evaluate their potential. All of the simulated evaluations were performed by means of Prolith/3D (ver.6. 1), and the experiments were performed with a 157 nm microstepper. As a result of our study, we identified the optimum transmittance of Att-PSMs and confirmed that the resolution obtained using high-transmittance Att-PSMs was improved more than 10% over that using the binary mask.
社団法人応用物理学会の論文
2002-06-30