Diffusion Control Using Matrix Change during Chemical Reaction for Inducing Anisotropic Diffusion in Chemically Amplified Resists

概要

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The trade-off relationships between resolution, sensitivity, and line edge roughness (LER) are the most serious problems in the development of resist materials applicable to the mass production of semiconductor devices at 22 nm node and below. The improvement of efficiencies associated with resist pattern formation is required to simultaneously meet the requirements for the resolution, sensitivity, and LER. However, the improvement using conventional methods is physically limited and inadequate. In this study, the potential of anisotropic diffusion for ultrafine patterning was examined from the viewpoint of the feasibility of chemically amplified resists below the 22 nm node. A concept of diffusion control using the matrix change induced during catalytic chain reaction is strongly required in the design of next-generation resist materials for simultaneously meeting the resist requirements below the 22 nm node.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-03-25