Experimental Results Obtained using Extreme Ultraviolet Laboratory Tool at New SUBARU
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概要
- 論文の詳細を見る
We have designed therr-aspherical-mirror optics that meets the specifications for 0.1 μm generation lithography, and are developing an extreme ultraviolet lithography(EUVL)laboratory tool suitable for device fabrication experiments. It operates at a wavelength of 13.5nm and employs a three-mirror imaging system with a numerical aperture of 0.1. It is capable of replicating 65nm patterns in an exposure field of 30mm×1mm size. First, single-layer chemically amplified resists are investigated using the synchrotron radiation(SR)source of New SUBARU. From the sensitivity curve, it was found that the positive-tone resist DP603 and the negative-tone resist SAL601 have high gamma values and high sensitivities to the extreme ultraviolet exposure wavelength. Furthermore, exposure experiments using the three-aspherical mirror imaging system were performed. A minimum line width of 56nm was demonstrated in an exposure area of 10mm×1mm. We confirmed that the three-aspherical mirror imaging system is useful for developing EUVL technology.
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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KINOSHITA Hiroo
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology
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WATANABE Takeo
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology
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Kinoshita Hiroo
Laboratory Of Advanced Science And Technology For Industry Himeji Institute Of Technology
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Watanabe Takeo
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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