Resist Outgassing Characteristics in Extreme Ultraviolet Lithography
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概要
- 論文の詳細を見る
Extreme ultraviolet (EUV) lithography requires a vacuum environment for exposure. The hydrocarbons outgassing ion species affect the reflectivity of the mask and the imaging mirror under EUV irradiation. Concerning the high-annealing-type chemically amplified (CA) resist based on the polyhydroxy styrene (PHS) resin, it is confirmed that propylene glycol monomethylether (PGME) which is employed as a solvent has the lowest outgassing characteristics under EUV irradiation. Mitigation of the hydrocarbons outgassing species and line edge roughness (LER) requires the main-chain-decomposition-type CA resist. From the outgassing measurement results, the methacrylate base resin can be employed in the resist process in EUV lithography.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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HADA Hideo
Advanced Material Development Division 1, Tokyo Ohka Kogyo Co., Ltd.
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HAMAMOTO Kazuhiro
Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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KOMANO Hiroshi
Advanced Material Development Division 1, Tokyo Ohka Kogyo Co., Ltd.
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Kinoshita Hiroo
Laboratory Of Advanced Science And Technology For Industry Himeji Institute Of Technology
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Watanabe Takeo
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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Hamamoto Kazuhiro
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigoori-cho, Akou-gun, Hyogo 678-1205, Japan
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Hada Hideo
Advanced Material Development Division 1, Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa-cho, Koza-gun, Kanagawa 253-0114, Japan
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Komano Hiroshi
Advanced Material Development Division 1, Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa-cho, Koza-gun, Kanagawa 253-0114, Japan
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