Dual Grating Interferometric Lithography for 22-nm Node
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概要
- 論文の詳細を見る
An extreme ultraviolet (EUV) interference lithography beamline using a single grating has been constructed at the BL3 beamline in the NewSUBARU synchrotron radiation facility. Using a single grating, a 400-nm line and space (L&S) resist pattern was replicated on a wafer by single grating interferometric lithography system combined with a bending magnet as a light source. In addition, a dual grating interferometric lithography which is suitable for a bending magnet as a light source has been designed and constructed at the BL3 beamline in NewSUBARU. Dual grating interferometric lithography has a capability to replicate of a 28 nm L&S pattern on the basis of the interference-fringes calculation under conditions of a partial coherent light source such as a bending magnet. In the dual grating interference optical system, two transparent gratings was employed. In addition, the dual grating interference lithographic exposure method can be combined with a stand alone EUV source, such as a laser produced plasma or a discharge produced plasma. Therefore, this exposure system is a compact system for the evaluation of resolution and line edge roughness (LER) in a EUV resist.
- 2008-06-25
著者
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Kinoshita Hiroo
Laboratory Of Advanced Science And Technology For Industry Himeji Institute Of Technology
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Watanabe Takeo
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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Fukushima Yasuyuki
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Koto, Kamigori, Akou-gun, Hyogo 678-1205, Japan
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Ohnishi Ryuji
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Suzuki Shota
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Shiotani Hideaki
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Koto, Kamigori, Akou-gun, Hyogo 678-1205, Japan
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Kinoshita Hiroo
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Koto, Kamigori, Akou-gun, Hyogo 678-1205, Japan
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Lee Dong
Photomask Team, Memory Development Business Division, Semiconductor Business, Samsung Electronics Co., Ltd.,San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do, 449-711, Korea
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Naulleau Patrick
Laurence Berkeley National Laboratory, MS 2-400, 1 Cyclotron Rd., Berkeley, CA 94720, U.S.A.
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Suzuki Shota
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Koto, Kamigori, Akou-gun, Hyogo 678-1205, Japan
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Ohnishi Ryuji
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Koto, Kamigori, Akou-gun, Hyogo 678-1205, Japan
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