Development of New Positive-Tone Molecular Resists Based on Fullerene Derivatives for Extreme Ultraviolet Lithography

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概要

• 論文の詳細を見る

• We have developed and evaluated new chemically amplified molecular resists based on fullerene derivatives with an excellent solubility in a standard alkali developer for extreme ultraviolet (EUV) lithography. We controlled the electron acceptability of fullerene derivatives and applied photo-acid generators (PAGs) with a high electron acceptability through ionization by EUV irradiation. As a result, sensitivities of positive-tone molecular resists based on fullerene derivatives were markedly improved, and we succeeded in obtaining good resolution, by applying an organic underlayer substrate without pattern collapse. Delineations of 45 nm half pitch (hp) and line width roughness (LWR) of 5.7 nm were achieved at an exposure dose of 12.5 mJ/cm2 on the organic underlayer.

• 2010-06-25

著者

• Oizumi Hiroaki

  Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn

• Toshiro Itani

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Tanaka Katsutomo

  Mitsubishi Chemical Corporation, 1-1 Shiroishi, Kurosaki, Yahatanisi-ku, Kitakyusyu 806-0004, Japan

• Kawakami Kiminori

  Mitsubishi Chemical Group Science and Technology Research Center, 1000, Kamoshida-cho, Aoba-ku, Yokohama 227-8502, Japan

• Kiminori Kawakami

  Mitsubishi Chemical Group Science and Technology Research Center, 1000, Kamoshida-cho, Aoba-ku, Yokohama 227-8502, Japan

関連論文

• Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
• Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
• Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography
• Development of New Positive-Tone Molecular Resists Based on Fullerene Derivatives for Extreme Ultraviolet Lithography
• Fluorinated-Polymer Based High Sensitivity Extreme Ultraviolet Resists
• Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
• Multicomponent negative-type photoresist based on Noria analog with 12 ethoxy groups
• Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
• Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
• In-situ Contamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU
• Extreme Ultraviolet Resist Fabricated Using Water Wheel-Like Cyclic Oligomer with Pendant Adamantyl Ester Groups
• Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
• Diffusion Control Using Matrix Change during Chemical Reaction for Inducing Anisotropic Diffusion in Chemically Amplified Resists

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