Process Characterization of Bi-layer Silylation Process for l93-nm Lithography
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概要
著者
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Itani T
Selete Tsukuba Jpn
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Satou I
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Watanabe Hiroyuki
Semiconductor Leading Edge Technologies Inc.
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Itani T
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
関連論文
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- Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists
- A Study of Photoacid Structure Dependence on Lithographic Performance in Chemically Amplified Resists
- 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
- Extension of the ArF Excimer Lithography to Sub-0.10/μm Design Rule Devices Using Bi-layer Silylation Process
- Sub-0.10 μm Hole Fabrication Using Bilayer Silylation Process for 193 nm Lithography
- Deblocking Reaction of Chemically Amplified Positive DUV Resists
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Characterization of Fluoropolymer Resist for 157-nm Lithography
- Progress in Top Surface Imaging Process
- Process Characterization of Bi-layer Silylation Process for l93-nm Lithography
- Dissolution Kinetics Analysis for Chemically Amplified Deep Ultraviolet Resist
- Study of Bi-layer Silylation Process for 193 nm Lithography