Study of Bi-layer Silylation Process for 193 nm Lithography

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概要

• 論文の詳細を見る
• Technical Association of Photopolymers, Japanの論文

著者

• Satou I

  Semiconductor Leading Edge Technol. Inc. Yokohama Jpn

関連論文

• Extension of the ArF Excimer Lithography to Sub-0.10/μm Design Rule Devices Using Bi-layer Silylation Process
• Sub-0.10 μm Hole Fabrication Using Bilayer Silylation Process for 193 nm Lithography
• Progress in Top Surface Imaging Process
• Process Characterization of Bi-layer Silylation Process for l93-nm Lithography
• Study of Bi-layer Silylation Process for 193 nm Lithography

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