Plasma Etching of ITO Thin Films Using a CH_4/H_2 Gas Mixture
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概要
- 論文の詳細を見る
Plasma etching of ITO (In_2O_3:Sn indium tin oxide) thin films has been performed using a CH_4/H_2 plasma. Etching occurs above a substrate temperature (T_s) of 60℃ and the etch rate increases with increasing T_s, while amorphous like or polymer-like carbon deposits onto the ITO films below 60℃. The apparent activation energy of the etching is 4.12 kcal/mol (0.18 eV). This small activation energy suggests that the desorption of produced volatiles is the rate-limiting process. Fine ITO patterns (1.5 μmL/S) were obtained using this gas mixture.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Sawai H
Lsi Laboratory Mitsubishi Electric Corporation
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Lid.
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Kakinuma Hiroaki
The Devices Technology Laboratory Oki Electric Industry Co. Ltd.
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Ltd.
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SAKAMOTO Masanao
Research Center for Superconducting Materials and Electronics, Osaka University
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Sawai Hideo
Research Labs. Oki Electric Industry Co. Ltd.
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Mohri Mikio
Research Laboratory, Oki Electric Industry Co., Ltd.
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Sakamoto Masaaki
Research Laboratory, Oki Electric Industry Co., Ltd.
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Mohri M
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Sakamoto M
Research Center For Superconducting Materials And Electronics Osaka University
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