Raman Scattering Measurements of Strains in ZnSe Epitaxial Films on GaAs : Techniques, Instrumentations and Measurement

スポンサーリンク

概要

• 論文の詳細を見る

• Raman spectroscopy has been applied to the evaluation of strains in ZnSe films grown by molecular beam epitaxy on GaAs. The observed variation of the ZnSe LO phonon frequency with thickness is explained well in terms of the conversion from the elastic strain due to accommodation of the lattice mismatch to the thermal strain due to the difference in thermal expansion coefficients of the substrate and epitaxial film. The strains estimated from the Raman measurements are consistent with the results obtained from X-ray analyses by other researchers.

• 社団法人応用物理学会の論文
• 1988-07-20

著者

• MITSUISHI Akiyoshi

  Department of Applied Physics,Osaka University

• Mizoguchi Kohji

  Department Of Applied Physics Faculty Of Engineering Osaka City University

• Mitsuishi A

  Department Of Applied Physics Osaka University

• Mitsuishi Akiyoshi

  Department Of Applied Physics Faculty Of Engineering Osaka University

• FUJII Akihito

  Department of Applied Physics, Osaka University

• Fujii A

  Okayama Univ. Graduate School Of Medicine And Dentistry

• Nakashima S

  Ntt Telecommunications Energy Lab. Atsugi Jpn

• Nakashima Shin-ichi

  Department Of Applied Physics Faculty Of Engineering Osaka University

• YONEDA Kiyoshi

  Semiconductor Research Center, Sanyo Electric Co., Ltd.,

• Yoneda Kiyoshi

  Semiconductor Research Center Sanyo Electric Co. Ltd.

関連論文

• Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
• Raman Scattering on SiC Polytypes-Probe for Evaluation of the Lattice Vibrational Amplitudes-
• Surface Structure of Ion-Implanted Silica Glass
• Raman Scattering in CdI_2 Polytypes and Dispersion of Optical Phonons
• Emission Properties of YBCO-Film Photo-Switches as THz Radiation Sources
• Ultrashort Electromagnetic Pulse Radiation from YBCO Thin Films Excited by Femtosecond Optical Pulse
• Near-Band-Edge Photoluminescence of GaAs Epitaxial Layers Grown at Low Temperature
• Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
• Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
• Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
• Hydrogen and PO_4 Modes of RbH_2PO_4
• Vibrational Modes of Deuterium in KD_2PO_4
• Infrared Lattice Reflection Spectra of II-VI Compounds
• The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe
• Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
• Temperature Dependence of the ν_2 Band of PO_4 Tetrahedrons in Rb_(NH_4)_xH_2PO_4 Mixed Crystals
• Anomalous Behavior of the ν_1 Mode of PO_4 Tetrahedrons in Rb_(NH_4)_xH_2PO_4 Mixed Crystals
• Vibrational Spectra of Ruby and Haematite in the Infrared Region
• The Far Infrared Reflectivity of NaCl, KCl and KBr Crystals
• The Far Infrared Absorption of Ferrites
• The Far Infrared Absorption of Sulfides, Selenides and Tellurides of Zinc and Cadmium
• Observation of Biexciton-Resonant Hyper-Parametric Scattering in SiO_2/CuCl Layered Structures
• Structural Identification of SiC Polytypes by Raman Scattering:27R and 33R Polytypes
• Far-Infrared Spectra of KH_2PO_4 and NH_4H_2PO_4
• Resonant Raman Effect on CdS_Se_x Mixed Crystals
• The Optical Properties of Cadmium Telluride in the Far Infrared Region
• Simultaneous Observation of Coherent GaSb-like and AlSb-like Longitudinal Optical Phonons in GaSb/AlSb Superlattices
• Infrared Absorption Spectra due to Localized Vibration in the II-VI Compounds
• Optoelectronic Properties of Orientation-controlled Lead Phthalocyanine Films
• Infrared Absorption of U-Centers in KCl and KBr (Part III. Related Problems)
• Raman Scattering from Plasmon-LO-Phonon Coupled Modes in n-ZnSe
• Temperature-Dependent Infrared Absorption Due to an Li-Localized Mode in AgBr
• Raman Investigation of the Localized Vibrational Mode of Carbon in Strain-Relaxed Si_Ge_x:C : Semiconductors
• Characterization of Silicon Implanted with Focused Ion Beam by Raman Microprobe
• Infrared Absorption of Localized Mode of Be in ZnSe
• Far-Infrared Optical Properties of Quenched Germanium; V. Uniaxial Stress Effects on the SA_1 Acceptors : Semiconductors and Semiconductor Devices
• Far-Infrared Optical Properties of Quenched Germanium : IV. Uniaxial Stress Effects on the SA_2 Acceptor
• Far-Infrared Optical Properties of Quenched Germanium III. : Effects of Additional Impurities
• Far-Infrared Optical Properties of Quenched Germanium. : II. Magnetic Field Effects
• Far-Infrared Optical Properties of Quenched Germanium I.: The Temperature Dependence of the Absorption and the Photothermal Ionization Spectra
• Quantitative analysis of the effects of the undergraduate seminar : In the preparation for the National Dental Board Examination
• Far Infrared Reflectivity of BaTiO_3
• Characterization of GdBa_2Cu_3O_ Thin Films by Raman Scattering
• Generation of Intense and Monochromatic Terahertz Radiation from Coherent Longitudinal Optical Phonons in GaAs/AlAs Multiple Quantum Wells at Room Temperature
• Raman Scattering from Anisotropic Phonon Modes in SiC Polytypes
• Characterization of 3C-SiC Epitaxial Layers on TiC(111) by Raman Scattering
• Coherent Control of Terahertz Wave from Coherent Longitudinal Optical Phonon in a GaAs/AlAs Multiple-Quantum-Well Structure
• Lattice Vibrations of Mg_xCd_Te Mixed Crystals
• Temperature Dependence of Raman Spectra on CuCl
• Lattice Vibrations in MgTe-CdTe Mixed Crystals
• Raman Spectra of CdCl_2 CdBr_2 and CdI_2
• Development of High-Power Optically-Pumped Far-Infrared Lasers for Plasma Diagnostics
• Raman and Infrared Spectra of Misfit Layer Compounds MNbS_3 (M=Sn, Pb, La, Ce)
• Optical Properties of Irradiated LiF Crystals in the Extreme Ultraviolet Region
• Study of Edge Effect in Photoacoustic Microscopy
• Raman Spectra of NH_4-TCNQ-I and -II
• Raman Scattering Measurements of Strains in ZnSe Epitaxial Films on GaAs : Techniques, Instrumentations and Measurement
• Phonon Raman Scattering in Orthorhombic and Tetragonal YBa_2Cu_3O_
• Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
• Brillouin Scattering of KCl-KBr Mixed Crystals
• Infrared Absorption of U-Centers in KCl and KBr
• Effect of Pressure on Phase Transition in Hg_2Cl_2 Crystals
• Raman Spectra of ZnSe-ZnTe Mixed Crystals
• Selective Enhancement of Coherent Optical Phonons Using THz-rate Pulse Train
• Photoreflectance and Resonant Raman Scattering of Above-Barrier Transitions in a GaAs/AlGaAs Superlattice
• Simultaneous Observation of Coherent GaSb-like and AlSb-like Longitudinal Optical Phonons in GaSb/AlSb Superlattices
• Nonradiative Transition Processes between the Relaxed Excited States of Ag- Centers Doped in KI Crystals
• Raman Investigation of the Localized Vibrational Mode of Carbon in Strain-Relaxed Si1-xGex:C
• Observation of Biexciton-Resonant Hyper-Parametric Scattering in SiO2/CuCl Layered Structures

もっと見る 閉じる

スポンサーリンク