Characterization of 3C-SiC Epitaxial Layers on TiC(111) by Raman Scattering

概要

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3C-SiC epitaxial layers of 0.3-4 μm thickness deposited on TiC(111) have been investigated by Raman microprobe. Relatively thick layers showed TO- and LO-phonon bands with peak frequencies higher than those of bulk reference by about 5.8 cm^<-1> and 3.6 cm^<-1>, respectively. This frequency upshift is due to residual stress in the epi-layers. The in-plane, compressive, biaxial stress is estimated to be 1.7 GPa, and there are 0.24% in-plane compressive strain and 0.10% tensile strain in the normal direction. The in-plane strain is 2-3 times smaller than those expected from the lattice mismatch, or from the difference in thermal expansion coefficient between the epi-layer and the substrate. In spite of a small lattice mismatch between 3C-SiC and TiC, the residual in-plane stress is larger than that reported for 3C-SiC on Si which has much larger lattice mismatching.
社団法人応用物理学会の論文
1997-09-15