Analysis of Defect Annihilation Process near 100℃ in Quenched Germanium
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-09-05
著者
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Hashimoto Fumio
School Of Engineering Okayama University
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KAMIURA Yoichi
School of Engineering, Okayama University
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Hashimoto Fumio
School Of Engineering Okayam University
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Kamiura Yoichi
School Of Engineering Okayama University
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HASHIMOTO Fumio
School of Engineering , Okayama University
関連論文
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- Binding Energies between a Vacancy and a Cd^- or In Atom in Al-10wt%Zn, Al-3.0wt% Ag and Al-3.0wt%Cu Alloys
- Defects Produced in Germanium by Quenching and Electron Irradiation
- A Copper-Related Shallow Acceptor in Quenched Germanium
- Existence of Copper Atoms in Quenched Germanium and Their Annealing Effect above 400℃
- Analysis of Defect Annihilation Process near 100℃ in Quenched Germanium
- Migration Energy of Quenched-In Defect in Germanium
- Annealing of Quenched Intrinsic-Type Germanium
- Intrinsic Defects Migrating near l00℃ in Quenched N- and P-Type Germanium
- Effect of Specimen Size on the Formation Energy of Thermal Defect in Germanium
- Reverse Annealing Stages in Quenched Antimony-Doped Germanium
- Interaction between Shallow-Level Defects and Copper Atoms in Queuched Germanium
- Far-Infrared Optical Properties of Quenched Germanium; V. Uniaxial Stress Effects on the SA_1 Acceptors : Semiconductors and Semiconductor Devices
- Far-Infrared Optical Properties of Quenched Germanium : IV. Uniaxial Stress Effects on the SA_2 Acceptor
- Far-Infrared Optical Properties of Quenched Germanium III. : Effects of Additional Impurities