Interaction between Shallow-Level Defects and Copper Atoms in Queuched Germanium

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1978-06-05

著者

• Hashimoto Fumio

  School Of Engineering Okayama University

• Hashimoto Fumio

  School Of Engineering Okayam University

• KAMURA Yoichi

  School of Engineering, Okayama University

• Kamura Yoichi

  School Of Engineering Okayama University

• HASHIMOTO Fumio

  School of Engineering , Okayama University

関連論文

• Binding Energies between a Vacancy and a Be or Ti Atom in Al-4.4 at% Zn and Al-0.18 at% Ag Alloys
• Binding Energies between a Vacancy and a Cd^- or In Atom in Al-10wt%Zn, Al-3.0wt% Ag and Al-3.0wt%Cu Alloys
• Defects Produced in Germanium by Quenching and Electron Irradiation
• A Copper-Related Shallow Acceptor in Quenched Germanium
• Existence of Copper Atoms in Quenched Germanium and Their Annealing Effect above 400℃
• Analysis of Defect Annihilation Process near 100℃ in Quenched Germanium
• Migration Energy of Quenched-In Defect in Germanium
• Annealing of Quenched Intrinsic-Type Germanium
• Effect of Specimen Size on the Formation Energy of Thermal Defect in Germanium
• Reverse Annealing Stages in Quenched Antimony-Doped Germanium
• Interaction between Shallow-Level Defects and Copper Atoms in Queuched Germanium

もっと見る 閉じる

スポンサーリンク