Intrinsic Defects Migrating near l00℃ in Quenched N- and P-Type Germanium

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1977-06-05

著者

• KAMIURA Yoichi

  School of Engineering, Okayama University

• Hashim0to Fumio

  School Of Engineering Okayama University

• Kamiura Yoichi

  School Of Engineering Okayama University

関連論文

• Defects Produced in Germanium by Quenching and Electron Irradiation
• A Copper-Related Shallow Acceptor in Quenched Germanium
• Analysis of Defect Annihilation Process near 100℃ in Quenched Germanium
• Annealing of Quenched Intrinsic-Type Germanium
• Intrinsic Defects Migrating near l00℃ in Quenched N- and P-Type Germanium
• Reverse Annealing Stages in Quenched Antimony-Doped Germanium
• Far-Infrared Optical Properties of Quenched Germanium; V. Uniaxial Stress Effects on the SA_1 Acceptors : Semiconductors and Semiconductor Devices
• Far-Infrared Optical Properties of Quenched Germanium : IV. Uniaxial Stress Effects on the SA_2 Acceptor
• Far-Infrared Optical Properties of Quenched Germanium III. : Effects of Additional Impurities

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