Depth Profile of Various Bonding Configration of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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野平 博司
Musashi Institute Of Technology
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KASE Masataka
Fujitsu Ltd.
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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SHINAGAWA Seiji
Musashi Institute of Technology
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Nohira Hiroshi
Faculty Of Engineering Musashi Institute Of Technology
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SHINAGAWA Seiji
Faculty of Engineering, Musashi Institute of Technology
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IKUTA Tetsuya
Fujitsu Ltd.
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HORI Mitsuaki
Fujitsu Ltd.
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OKAMOTO Hideyuki
Faculty of Engineering, Musashi Institute of Technology
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HATTORI Takeo
Faculty of Engineering, Musashi Institute of Technology
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Hattori T
New Industry Creation Hatchery Center Tohoku University
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Nakazawa Hiroshi
New Industry Creation Hatchery Center Tohoku University
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Okamoto Hideyuki
Faculty Of Engineering Musashi Institute Of Technology
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Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
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