Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation

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概要

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• Depth profiles of composition and chemical structures in radical nitrided silicon oxynitride films formed with Ar/N2, Xe/N2, or Ar/NH3 plasma excited by microwave have been investigated by X-ray photoelectron spectroscopy combined with step etching in HF solution. The relationship between the intensities of emission from N2+ radical in these plasmas and the concentration of nitrogen atoms forming Si3$\equiv$N configuration near the silicon oxynitride film/Si substrate interface nitrided using these plasmas was studied. The emission intensities from N2+ radical generated in Xe/N2 or Ar/NH3 plasma are a quarter or one-sixth of that from N2+ radical generated in Ar/N2 plasma respectively. However, the emission from NH radical is also detected in Ar/NH3 plasma. Although the nitrogen concentration of Xe/N2 plasma is smaller than that of Ar/N2 plasma at the film/substrate interface, that of Ar/NH3 plasma is larger than that of Ar/N2 plasma at the interface. It is important for the reduction of the nitrogen concentration near the film/substrate interface to use Xe/N2 plasma in which both of the generation efficiencies of N2+ and NH radicals are low.

• 2006-08-15

著者

• HATTORI Takeo

  New Industry Creation Hatchery Center, Tohoku University

• Sugawa Shigetoshi

  Department Of Electronic Engineering Tohoku University

• Umeda Hiroshi

  Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas

• Tsujikawa Shimpei

  Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas

• Kawase Kazumasa

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Inoue Masao

  Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Suwa Tomoyuki

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Higuchi Masaaki

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Hattori Takeo

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Inoue Masao

  Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Umeda Hiroshi

  Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Kawase Kazumasa

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Ohmi Tadahiro

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Tsujikawa Shimpei

  Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

• Sugawa Shigetoshi

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan

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