Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces

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概要

• 論文の詳細を見る

• High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than $5\times 10^{10}$ eV-1 cm-2. High-resolution soft-X-ray-excited Si $2 p$ spectra were measured for the Si3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• HATTORI Takeo

  Musashi Institute of Technology

• NOHIRA Hiroshi

  Musashi Institute of Technology

• HIGUCHI Masaaki

  Graduate School of Engineering, Tohoku University

• ARATANI Takashi

  Graduate School of Engineering, Tohoku University

• SHINAGAWA Seiji

  Musashi Institute of Technology

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Hamada Tatsufumi

  Graduate School Of Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Hattori Takeo

  Musashi Institute of Technology, Tamazutsumi, Setagaya-ku, Tokyo 158-8857, Japan

• Ikenaga Eiji

  JASRI/Spring-8, Kouto, Mikazuki, Hyogo 679-5198, Japan

• Nohira Hiroshi

  Musashi Institute of Technology, Tamazutsumi, Setagaya-ku, Tokyo 158-8857, Japan

• Higuchi Masaaki

  Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Aratani Takashi

  Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Shinagawa Seiji

  Musashi Institute of Technology, Tamazutsumi, Setagaya-ku, Tokyo 158-8857, Japan

• Hamada Tatsufumi

  Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• IKENAGA Eiji

  JASRI/Spring-8

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