A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

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概要

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• A very low dark current (VLDC) temperature-resistant approach which best suits a wide dynamic range (WDR) complementary metal oxide semiconductor (CMOS) image sensor with a lateral over-flow integration capacitor (LOFIC) has been developed. By implementing a low electric field photodiode without a trade-off of full well-capacity, reduced plasma damage, re-crystallization, and termination of silicon–silicon dioxide interface states in the front end of line and back end of line (FEOL and BEOL) in a 0.18 μm, two polycrystalline silicon, three metal (2P3M) process, the dark current is reduced to 11 e-/s/pixel (0.35 e-/s/μm2: pixel area normalized) at 60 °C, which is the lowest value ever reported. For further robustness at low and high temperatures, 1/3-in., 5.6-μm pitch, $800\times 600$ pixel sensor chips with low noise readout circuits designed for a signal and noise hold circuit and a programmable gain amplifier (PGA) have also been deposited with an inorganic cap layer on a micro-lens and covered with a metal hermetically sealed package assembly. Image sensing performance results in 2.4 e-rms temporal noise and 100 dB dynamic range (DR) with 237 ke- full well-capacity. The operating temperature range is extended from $-40$ to 85 °C while retaining good image quality.

• 2008-07-25

著者

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Akahane Nana

  Graduate School Of Engineering Tohoku University

• Mizobuchi Koichi

  Texas Instruments Japan, Miho, Ibaraki 300-0496, Japan

• Adachi Satoru

  Texas Instruments Japan, Miho, Ibaraki 300-0496, Japan

• Tejada Jose

  Texas Instruments Japan, Miho, Ibaraki 300-0496, Japan

• Oshikubo Hiromichi

  Texas Instruments Japan, Miho, Ibaraki 300-0496, Japan

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