Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• TERAMOTO Akinobu

  New Industry Creation Hatchery Center, Tohoku University

• Sugawa S

  Graduate School Of Engineering Tohoku University

• Cheng Weitao

  New Industry Creation Hatchery Center Tohoku University

• HIGUCHI Masaaki

  TOSHIBA CORPORATION

• SUGAWA Sigetoshi

  Tohoku University

• HIRAYAMA Masaki

  New Industry Creation Hatchery Center, Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Sugawa Shigetoshi

  Department Of Electronic Engineering Tohoku University

• Hirayama Masaki

  Toshiba Corporation

• Hirayama Masaki

  New Industry Creation Hatchery Center Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku Univ.

• WEITAO Cheng

  Graduate School of Engineering, Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

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