A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing

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概要

• 論文の詳細を見る

• A new complementary metal oxide semiconductor (CMOS) image sensor with a capability for noise reduction, column-parallel analog to digital (A/D) converters, a capacity for signal processing for object extraction every approximately 1 ms and a high-quality frame signal output every 1/60 s has been developed. The sensor pixel circuit is composed of a photodiode, a signal readout circuit with noise reduction and sample-hold functions. The sensor is equipped with column-parallel A/D converters and arithmetic logic units (ALU). Three feature values for object extraction, such as color difference, color intensity and texture, are first calculated, and motion is detected using the inter frame differences of these feature values. The calculations of these feature values are simplified so as to be implemented by compact ALU. The size of pixel, A/D converter and ALU are small enough to be able to incorporate them into practical sensor chip.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Kotani Koji

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• Sugawa Shigetoshi

  Department Of Electronic Engineering Tohoku University

• TATE Tomoyasu

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Chiba Koji

  Department Of Clinical Pharmacology Pfizer Global R&d Tokyo Laboratories Pfizer Japan Inc.

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Tate Tomoyasu

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Kotani Koji

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Sugawa Shigetoshi

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Chiba Koji

  Department of Applied Chemistry, Faculty of Engineering, Yamagata University

• Chiba Koji

  Department of Apblied Chemistry, Faculty of Engineering, Yamagata University

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