Postfabrication Independent Inductance and Quality Factor Adjustments of On-Chip Inductors by Above-CMOS Processing for Rapid Prototyping of Radio Frequency System on Chips
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概要
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The flexible adjustment of on-chip inductor characteristics after a regular complementary metal--oxide--semiconductor (CMOS) fabrication was realized by the ``above-CMOS'' processing technology for radio frequency (RF) system-on-a-chip (SoC) rapid prototyping. It is shown that the above-CMOS metal pattern formation in a chip-by-chip manner can both increase and decrease the inductance (L) values of on-chip inductors. It is realized by applying various planar patterns of a metal layer deposited on the passivation layer of the chip. To increase the modification range of the characteristics and to establish an independent L and quality factor (Q) adjustment scheme, we have newly developed a pre-design method and a Q-compensation method. By combining these methods, the effective L and Q values of the on-chip inductors can be independently and arbitrarily modified. The adjustment of the input impedance matching frequency of a low-noise amplifier (LNA) using this scheme has also been demonstrated.
- 2012-04-25
著者
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Kotani Koji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Sasaki Yuki
Department Of Cardiovascular Surgery Toho University Omori Medical Center
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Kotani Koji
Department of Electronics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Sasaki Yuki
Department of Electronics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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